DMG4406LSS-13 DMG4406LSS FIELD EFFECT TRANSISTOR

DMG4406LSS-13 DMG4406LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF Datasheet：

Specification：

Manufacturer: Diodes Incorporated

Product Category: MOSFET

RoHS:  Details

Id - Continuous Drain Current: 9.3 A

Vds - Drain-Source Breakdown Voltage: 30 V

Rds On - Drain-Source Resistance: 12 mOhms

Transistor Polarity: N-Channel

Vgs th - Gate-Source Threshold Voltage: 1.4 V

Qg - Gate Charge: 12.5 nC

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 1.5 W

Mounting Style: SMD/SMT

Package / Case: SO-8

Packaging: Reel

Brand: Diodes Incorporated

Channel Mode: Enhancement

Configuration: Single

Fall Time: 5.1 ns

Minimum Operating Temperature: - 55 C

Rise Time: 21.2 ns

Series: DMG4406

Typical Turn-Off Delay Time: 22.3 ns

Picture：

MJD is a corporation which engaged in agency electronic components. MJD Through seventeen years unrimitting efforts,  aspire to provide our customers with world-leading products and service. Nowalready became a one of the most famous electronic components distributor in China.

Shen Zhen Mingjiada electronic.Co.,ltd.