IRG7S313UTRL IRG7S313 PDP TRENCH IGBT

IRG7S313UTRL IRG7S313 PDP TRENCH IGBT 

PDF Datasheet：

Specification：

Manufacturer: International Rectifier

Product Category: MOSFET

RoHS:  Details

Id - Continuous Drain Current: 44 A

Vds - Drain-Source Breakdown Voltage: 330 V

Transistor Polarity: N-Channel

Vgs th - Gate-Source Threshold Voltage: 4.7 V

Qg - Gate Charge: 33 nC

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 78 W

Mounting Style: SMD/SMT

Package / Case: D-PAK-3

Packaging: Reel

Brand: International Rectifier

Configuration: Single

Fall Time: 68 ns

Forward Transconductance - Min: 47 S

Rise Time: 13 ns

Factory Pack Quantity: 800

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