SAMSUNG K4T1G164QG-BCF7 1Gb G-die DDR2 SDRAM

SAMSUNG

K4T1G164QG-BCF7

K4T1G164 date sheet

Product category

1Gb G-die DDR2 SDRAM

Application

general applications.

Description

Speed       DDR2-667 5-5-5  DDR2-800 6-6-6  DDR2-800 5-5-5  DDR2-1066 7-7-7  Units

7CAS Latency    5                 6              5             7              tCK

tRCD(min)       15                15             12.5          13.125          ns

tRP(min)        15                15             12.5          13.125          ns

tRC(min)        60                60             57.5          58.125          ns        

JEDEC standard VDD = 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin,

533MHz fCK for 1066Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5, 6, 7

• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5, 6

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an

optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination

• Special Function Support

- 50ohm ODT

- High Temperature Self-Refresh rate enable

• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at

85C < TCASE < 95 C

• All of products are Lead-Free, Halogen-Free, and RoHS compliant

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