ST M29W160ET M29W160ET70ZA6F 3V Supply Flash Memory

Description

Image

Features

SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase and Read

ACCESS TIMES: 70, 90ns

PROGRAMMING TIME

– 10µs per Byte/Word typical

35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program

algorithms

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

TEMPORARY BLOCK UNPROTECTION MODE

COMMON FLASH INTERFACE

– 64 bit Security Code

LOW POWER CONSUMPTION

– Standby and Automatic Standby

100,000 PROGRAM/ERASE CYCLES per BLOCK

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160ET: 22C4h

– Bottom Device Code M29W160EB: 2249h