NXP BLF7G27LS-90P 90W LDMOS power transistor

Description

Image

Features

Excellent ruggedness

High efficiency

Low Rth providing excellent thermal stability

Designed for broadband operation (2500 MHz to 2700 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range