RUL035N02 RUL035N02TR N-Channel 20V 3.5A(Ta) 320mW(Ta)

Features

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Features

FET Type    N-Channel  

Technology MOSFET (Metal Oxide)  

Drain to Source Voltage (Vdss)    20V

Current - Continuous Drain (Id) @ 25°C   3.5A (Ta)   

Drive Voltage (Max Rds On, Min Rds On)  1.5V, 4.5V  

Vgs(th) (Max) @ Id  1V @ 1mA  

Gate Charge (Qg) (Max) @ Vgs   5.7nC @ 4.5V   

Input Capacitance (Ciss) (Max) @ Vds     460pF @ 10V   

Vgs (Max)   ±10V   

FET Feature -    

Power Dissipation (Max) 320mW (Ta)    

Rds On (Max) @ Id, Vgs 43 mOhm @ 3.5A, 4.5V 

Operating Temperature  150°C (TJ) 

Mounting Type  Surface Mount  

Supplier Device Package TUMT6

APPLICATION

DCDC converters