IRG4PC30U IRG4PC30UPBF INSULATED GATE BIPOLAR TRANSISTOR

Details

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FEATURES

Product Category:IGBT Transistors   

Manufacturer:Infineon   

RoHS:RoHS Compliant Details    

Configuration:Single 

Collector- Emitter Voltage VCEO Max:600 V   

Collector-Emitter Saturation Voltage:  2.1 V   

Maximum Gate Emitter Voltage:+/- 20 V 

Continuous Collector Current at 25 C:23 A

Pd - Power Dissipation:100 W    

Mounting Style:Through Hole

Package / Case:TO-247-3    

Maximum Operating Temperature:+ 150 C    

Packaging:Tube

Brand:   Infineon Technologies   

Continuous Collector Current Ic Max: 23 A    

Height:  20.3 mm    

Length:15.9 mm

Minimum Operating Temperature:- 55 C  

Factory Pack Quantity:4000 

Technology:Si   

Width:   5.3 mm

Unit Weight:1.340411 oz