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IRG4PSH71U IRG4PSH71UPBF IGBT Transistors 1200V

 

Manufacturer

Infineon / IR

Manufacturer Part

IRG4PSH71UPBF

Description

IGBT 1200V 99A 350W Through Hole SUPER-247 (TO-274AA)

Application

INSULATED GATE BIPOLAR TRANSISTOR

Datasheet

IRG4PSH71U

Details

Image

 

Manufacturer: Infineon

Product Category: IGBT Transistors

RoHS:  Details 

Technology: Si

Package / Case: TO-274AA-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.7 V

Maximum Gate Emitter Voltage: +/- 20 V

Continuous Collector Current at 25 C: 99 A

Pd - Power Dissipation: 350 W

Minimum Operating Temperature: - 55 C

Packaging: Tube

Height: 20.3 mm 

Length: 15.6 mm 

Width: 5 mm 

Brand: Infineon / IR 

Factory Pack Quantity: 25

 

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