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NXP Transistor PSMN4R8-100BSE MOSFET N-CH 100V 120A D2PAK

Mingjiada Corporation Supply and Recycle NXP Transistor PSMN4R8-100BSE MOSFET N-CH 100V 120A D2PAK
 
Absolutely new and original, a large number of factory stocks, the actual order has an acceptable price to negotiate, please refer to the consultation on the day for quotation! Welcome to contact us at sales@hkmjd.com! ! !
 
Product model: PSMN4R8-100BSE
Manufacturer: NXP
Year: 21+
Package: TO-263
 
product properties  
Product Category: MOSFET
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 120 A
Rds On-Drain Source On Resistance: 4.8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th-gate-source threshold voltage: 3 V
Qg-gate charge: 196 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-Power Dissipation: 405 W
Installation style: SMD/SMT
Package/Case: TO-263-3
Channel Mode: Enhancement
Brand: Nexperia
Configuration: Single
Fall Time: 69 ns
Product Type: MOSFET
Rise time: 65 ns
Factory Packing Quantity: 800
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 127 ns

Typical turn-on delay time: 41 ns 

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