ON NTMFS4C028NT1G N-Channel MOSFET Transistor - FET

The NTMFS4C028 N-Channel MV MOSFETs are 30V, 40V and 60V MOSFETs produced using an advanced power trench process combined with shielded gate technology. The process is optimized to minimize on-resistance, plus excellent soft body diodes to maintain excellent switching performance.

Product properties

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 30 V

Current at 25°C - Continuous Drain (Id) 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

On-resistance (max) at various Id, Vgs 5.8 milliohms @ 30A, 10V

Vgs(th) (max) at different Id 2.1V @ 250µA

Gate charge (Qg) (max) at different Vgs 10.9 nC @ 4.5 V

Vgs (max) ±20V

Input Capacitance (Ciss) at Vds (max) 1252 pF @ 15 V

FET function -

Power Dissipation (Maximum) 760mW (Ta), 25.5W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Vendor Device Package 5-DFN (5x6) (8-SOFL)

Package/Case 8-PowerTDFN, 5-Lead

Application

CPU power

DC-DC converter

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