Supply Onsemi MOSFET Transistors, IGBT Transistors, Silicon Carbide (SiC) MOSFETs
Shenzhen Mingjiada Electronics Co., Ltd.——Long term supply of Onsemi MOSFET transistors, IGBT transistors, Silicon Carbide (SiC) and other products, supporting small to large scale orders. With up to 1 million models in stock, the company has the advantage of being able to respond quickly to customer needs and reduce waiting times.
Below is a list of related Onsemi discrete devices, covering core product lines such as MOSFET transistors, IGBT transistors, and Silicon Carbide (SiC) devices, which are supplied by Mingjiada Electronics, and the related information is shown below:
I. MOSFET Transistors
Onsemi MOSFETs lead the industry with low on-resistance (Rds(on)), high switching speeds, and excellent thermal performance, covering low-voltage to high-voltage application scenarios:
1. Low-voltage MOSFETs (<100V):
NTMFS5C670NL (40V, 60A): Suitable for synchronous rectification, DC-DC conversion.
FDMS86181 (100V, 120A): Automotive grade device for motor drive.
2. Medium and High Voltage MOSFETs (500V-900V):
FDPF51N25 (250V, 51A): Preferred for industrial power supply, UPS systems.
NTHL040N120SC1 (1200V, 40A): Super Junction MOSFET, core device for PV inverter.
Advantage: optimised EMI characteristics, TO-Leadless and other packages to improve power density.
II. IGBT Transistors
Onsemi IGBT products focus on High efficiency, low loss, suitable for inverter drives and high power systems:
1. Discrete IGBTs:
NGB8207BN (600V, 20A): inverter appliances, small industrial drives.
2. IGBT modules:
NXH400T120L3Q2 (1200V, 400A): automotive main drive inverters, high power industrial equipment.
FGA60N65SMD (650V, 60A): welding machine, uninterruptible power supply (UPS).
Advantage: Field Stop technology to reduce conduction loss, integrated temperature monitoring function.
III. Silicon Carbide (SiC) Devices
Onsemi SiC technology leads the next generation of power innovation, breaking through the limits of silicon-based devices:
1. SiC MOSFETs:
NTBG022N170SC1 (1700V, 22mΩ): Photovoltaic inverters, energy storage systems.
NVHL080N120SC1 (1200V, 80mΩ): EV charging pile, server power supply.
2. SiC diodes:
FFSH40120ADN (1200V, 40A): PFC circuits, LLC resonant converters.
Advantages: 70% lower switching loss, 99%+ system efficiency, 200°C high temperature operation.
QQ: 1668527835
Tel: 13410018555
E-mail: chen13410018555@163.com
Mingjiada Electronics——With professional supply ability, help customers win in the technical starting line!
