MRFE6S9060NR1 MOSFET

FreescaleのシングルN-CDMA 横型Nチャンネル 広帯域RFパワーMOSFET

• Typical single-carrier N–CDMA performance @ 880 MHz, VDD = 28 V, IDQ = 450 mA, Pout = 14W avg., IS–95 CDMA (pilot, sync, paging, traffic codes 8 through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF
  • Power gain: 21.1 dB
  • Drain efficiency: 33%
  • ACPR @ 750 kHz offset:-45.7 dBc in 30 kHz bandwidth
• Capable of handling 10:1 VSWR, @ 32 VDC, 880 MHz, 3 dB overdrive, designed for enhanced ruggedness

• Typical GSM EDGE performance: VDD = 28 V, IDQ = 500 mA, Pout = 21 W avg., full frequency band (920 to 960 MHz)
• Spectral regrowth @ 400 kHz Offset =-62 dBc
• Spectral regrowth @ 600 kHz Offset =-78 dBc

• Power gain: 20 dB
• Drain efficiency: 46%
• EVM: 1.5% rms

• Typical GSM performance: VDD = 28 V, IDQ = 500 mA,
  Pout = 60 W, full frequency band (920 to 960 MHz)
• Characterized with series equivalent large–signal impedance parameters
• Integrated ESD protection

• 225°C capable plastic package
• Power gain: 20 dB
• Drain efficiency: 63%
• RoHS compliant