Recycle ST Power Transistors:IGBTs,Power MOSFETs,PowerGaN,SiC MOSFETs
Shenzhen Mingjiada Electronics Co., Ltd., as a leading electronic component recycling service provider in China, leverages its professional industry expertise, global recycling network, and compliant disposal processes to offer comprehensive recycling services for various electronic component products to businesses of all types. These services cover a wide range of products, including integrated circuits, 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, vehicle-to-everything (V2X) ICs, automotive-grade ICs, communication ICs, artificial intelligence (AI) ICs, storage ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, Wi-Fi chips, wireless communication modules, connectors, and more. This helps customers reduce inventory, minimise storage space, and lower both storage and management costs.
Recycling Process:
If you have inventory electronic components that need to be disposed of, you can send us an email listing the ICs/modules you wish to sell. Our company will dispatch professional staff to your premises for an initial inspection and classification of your inventory electronic components, and will provide a corresponding recycling price based on factors such as the type, quantity, and quality of the recycled components. Once an agreement is reached, specific delivery arrangements can be negotiated.
【IGBTs】
ST offers a comprehensive portfolio of insulated gate bipolar transistors (IGBTs) ranging from 300 to 1700 V, belonging to the STPOWER family.
Best trade-off between conduction and switch-off energy losses
Maximum junction temperature up to 175°C
Wide switching frequency range
Copackaged antiparallel diode option for improved power dissipation and optimal thermal management.
Applications
Offering an optimal trade-off between switching performance and on-state behavior, ST IGBTs are suitable for industrial and automotive (AEC-Q101 qualified) segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating , solar inverters, traction inverters, and on-board chargers & fast chargers.
【Power MOSFETs】
The ST power MOSFET portfolio offers a broad range of breakdown voltages from -100 to 1700 V, combining state-of-the-art packaging with low gate charge and low on-resistance. Our process technology ensures high-efficiency solutions through enhanced power handling with MDmesh and STMESH trench high-voltage power MOSFETs and STripFET low-voltage power MOSFETs.
Applications
Server & Telecom Power
Microinverters
Fast charges
Automotive
Home and professional appliance
【PowerGaN】
ST POWER GaN Transistors are highly efficient transistors based on gallium nitride (GaN), a relatively new wide bandgap compound that provides real added value in power conversion solutions.
The major challenge of power electronics today is dealing with the growing need for improved efficiency and power performance and at the same time, the constant pursuit of cost and size reductions.
The introduction of Gallium Nitride (GaN) technology moves in this direction and, as it becomes increasingly available commercially, its use in power conversion applications is growing.
With a better figure-of-merit (FOM), on-resistance (RDS(on)), and total gate charge (QG) than silicon counterparts, GaN power transistors also offer an high drain to source voltage capability, zero (or negligible in the case of cascoded devices) reverse recovery charge and very low intrinsic capacitances. The leading solution for improving efficiency in power conversion applications, GaN technology makes it possible to meet the most stringent energy requirements along with higher power densities as it can work at much higher frequencies, thus reducing the system size. STPOWER GaN transistors represent a real breakthrough in industrial and automotive applications for efficiency and high frequency solutions.
【SiC MOSFETs】
Create more efficient and compact systems than ever with STPOWER SiC MOSFETs
Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to SiC MOSFETs. With an extended voltage range, from 650 to 2200 V, ST's silicon-carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.
The main features of our SiC MOSFETs include:
Automotive-grade (AG) qualified devices
Very high temperature handling capability (max. TJ = 200 °C)
Very high switching frequency operation and very low switching losses
Low on-state resistance
Gate drive compatible with existing ICs
Very fast and robust intrinsic body diode
Our SiC MOSFET portfolio includes state-of-the-art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK and HU3PAK) specifically designed to meet the stringent requirements of automotive and industrial applications.
