The official website - Shenzhen Mingjiada Electronic Co., LTD
Amid the rapid iteration wave of 800V platforms for new energy vehicles, high-efficiency power supplies for data centers, and fast charging for consumer electronics, Renesas' gallium nitride (GaN) power devices, with their disruptive high-frequency and low-loss characteristics, are reshaping the physical limits of power conversion. However, the switching of technical routes, design changes or fluctuations in orders often result in a large number of brand-new original GaN devices being stranded in warehouses, becoming "dormant capital" on the enterprise's balance sheet. Shenzhen Mingjiada Electronics Co., LTD., relying on its accumulation of automotive electronics recycling technology and a terminal channel network of hundreds of billions of yuan, has launched the (Renesas) GaN power Device Special high-price recycling Program - with extreme performance testing, transparent premium mechanism and 48-hour lightning payment, it helps you transform idle cutting-edge technology into core competitiveness!
I. Why Choose Renesas GaN Devices?
Automotive-grade components are at a high premium, and the value of rare models has doubled
New energy core components: 1700V GaN HEMT ISL7000x series supporting 800V platform (Rds(on) < 80mΩ), due to the capacity gap of SiC modules, the premium rate reaches 35%-50%.
Industrial star model: 650V enhanced GaN ISL8180x series (switching frequency > 2MHz), dynamically priced based on the power demand gap of data centers, providing value anchored to recent transaction data.
2. Four-dimensional quantum-level detection ensures "zero-loss" recycling
Mingjiada has established a dedicated GaN testing system to ensure that the devices are "unsoldered and zero aged"
Extreme electrical stress verification: The switching loss (Eon+Eoff < 30μJ) and reverse recovery charge Qrr=0 characteristics were measured on the dual-pulse test platform.
High-temperature dynamic aging: Continuous operation for 500 hours at a junction temperature of 175℃ to verify the gate threshold voltage drift (ΔVth < 0.5V).
Non-destructive structural identification: Microfocus X-ray scanning of the internal AlGaN/GaN heterojunction structure + original factory laser marking verification;
Surge limit test: Apply a 100A/10μs surge as per IEC 61000-4-5 standard to screen for avalanche resistance.
3. Global ultra-fast response, with capital recovery as fast as 48 hours
Upon successful inspection, the full payment will be remitted by telegraphic transfer (supporting cross-border multi-currency settlement).
The Hong Kong DDP customs clearance hub completes international delivery within 72 hours.
Our factories in the Yangtze River Delta and Pearl River Delta offer 24-hour door-to-door pickup services, with a 300% increase in capital efficiency.
Ii. Scope of GaN products to be prioritized for recycling
Mingjiada specializes in the recycling of brand-new, original Renesas gallium nitride power devices (requirements: not installed on the machine, original factory anti-static packaging, batch traceable)
The core of the electric drive revolution in new energy vehicles
Automotive-grade GaN HEMT: ISL7000x series (1700V/30A), compatible with OBC/ DC-DC converters, with switching loss reduced by 40% compared to SiC.
Integrated drive module: ISL81801 (withstand voltage 1200V), with built-in Miller clamping function, solving the problem of high-speed switching crosstalk.
• A powerful tool for breaking through energy efficiency in data centers
Multi-chip package module: ISL81807 (650V/60A), supporting 2MHz high-frequency switching, improving the energy efficiency of 48V server power supplies to 98.5%;
Low gate charge devices: ISL8160x series (Qg < 10nC), with LLC topology to achieve a power density of over 100W/in³.
• A disruptor of fast charging in consumer electronics
Ultra-compact DFN package: ISL81803 (5×6mm), compatible with 65W PD fast charging, standby power consumption < 15mW;
High integration solution: ISL81804 (built-in LDO+ protection), simplifying the 30W wireless charging design.
Note: Priority will be given to the recycling of AEC-Q101-certified components and leftover materials from EOL projects from original equipment manufacturers (Oems) and Tier1 suppliers. Supporting purchase vouchers can increase the valuation by 10% to 15%.
Three and four-step ultra-fast monetization process
List submission: Send model (e.g. ISL81807), quantity, package (e.g. PQFN 8×8) and batch to sales@hkmjd.com, along with original factory vacuum packaging photos.
Technical pricing: Dynamic parameter testing plans and premium quotations will be provided within 24 hours, and third-party laboratory re-inspections are supported.
Safe delivery: Logistics transportation + moisture-proof and anti-static packaging, constant temperature and humidity storage in Shenzhen warehouse.
Payment upon inspection: Complete the electrical performance verification and make full payment within 48 hours of arrival.
Act now and unleash the potential of your GaN devices!
Recycling Hotline: +86 13410018555 (Mr. Chen)
Technical assessment: sales@hkmjd.com
Official website price lock channel: www.mjdic.com
