NXP NE57810S Static random access memory PWR DBL DATA RATE MJD New in stock

NXP  NE57810S  Static random access memory PWR DBL DATA RATE MJD New in stock

PDF datasheet:

DESCRIPTION

The NE57810 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions.

The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is one-half that of the RAM supply voltage. It is capable of providing up to ±3.5 A for sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at start-up, and overtemperature shutdown protects the device in extrem temperature situations.

The SPAK-5 (SOT756) package is thermally robust for flexibility of thermal design. Because the NE57810 is a linear regulator, no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors.

FEATURES

• Fast transient response time

• Overtemperature protection

• Overcurrent protection

• Commercial (0 °C to +70 °C) temperature range

• Reduced need for external components

  (switching FETs, inductors, decoupling capacitors)

• Internal divider maintains termination voltage at 1/2 memory

  supply voltage

• Reference out for other memory and control components

• Optional external voltage reference in for flexible application

• Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V)

SDRAM systems

APPLICATIONS

• Desktop microcomputer systems

• Workstations

• Servers

• Game machines

• Set top boxes

• Embedded systems

• Digital video recorders

From :www.hkmjd.com

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