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NXP BLF6G10LS-135R BLF6G10LS-135RN UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
| Part number | Brand | Date | QTY | Package | Remarks |
| BLF6G10LS-135R | NXP | 14+ROHS | 7500 | SOT502B |
Original have in stock |
Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDqof 950 mA:
-Average output power = 26.5 W
-Power gain = 21.0 dB
-Efficiency = 28.0 %
-ACPR =−39 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (800 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)
Specification
| Datasheets | BLF6G10LS-135R  |
|---|---|
| Transistor Type | LDMOS |
| Frequency | 871.5MHz ~ 891.5MHz |
| Gain | 21dB |
| Voltage - Test | 28V |
| Current Rating | 32A |
| Noise Figure | - |
| Current - Test | 950mA |
| Power - Output | 26.5W |
| Voltage - Rated | 65V |
| Package / Case | SOT-502B |
Picture
From :www.hkmjd.com
Shen Zhen Mingjiada electronic.Co.,ltd.
