Micron MT46V32M16P-6T IC DDR SDRAM 512MBIT 6NS 66TSOP

Micron MT46V32M16P-6T IC DDR SDRAM 512MBIT 6NS 66TSOP

Features

• VDD = 2.5V ±0.2V, VDDQ = 2.5V ±0.2V

VDD = 2.6V ±0.1V, VDDQ = 2.6V ±0.1V (DDR400)1

• Bidirectional data strobe (DQS) transmitted/

received with data, i.e., source-synchronous data 

capture (x16 has two – one per byte)

• Internal, pipelined double-data-rate (DDR) 

architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center- 

aligned with data for WRITEs

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data (x16 has two – one per byte)

• Programmable burst lengths: 2, 4, or 8

• Auto refresh 

– 64ms, 8192-cycle

• Longer-lead TSOP for improved reliability (OCPL)

• 2.5V I/O (SSTL_2 compatible)

• Concurrent auto precharge option is supported

• tRAS lockout supported (tRAP = tRCD)

Specification

Datasheets	MT46V32M16P-6T
Format - Memory	RAM
Memory Type	DDR SDRAM
Memory Size	512M (32M x 16)
Speed	6ns
Interface	Parallel
Voltage - Supply	2.3 V ~ 2.7 V
Operating Temperature	0°C ~ 70°C
Package / Case	66-TSSOP (0.400", 10.16mm Width)

Picture

From :www.hkmjd.com

Shen Zhen Mingjiada electronic.Co.,ltd.