WINBOND W947D6HBHX6E W947D6HBH 128Mb Mobile LPDDR

WINBOND W947D6HBHX6E W947D6HBH 128Mb Mobile LPDDR

FEATURES

 VDD = 1.7~1.95V 

 VDDQ = 1.7~1.95V; 

 Data width: x16 / x32 

 Clock rate: 200MHz(-5),166MHz(-6),133MHz(-75) 

 Partial Array Self-Refresh(PASR) 

 Auto Temperature Compensated Self-Refresh(ATCSR) 

 Power Down Mode 

 Deep Power Down Mode (DPD Mode) 

 Programmable output buffer driver strength 

 Four internal banks for concurrent operation 

 Data mask (DM) for write data 

 Clock Stop capability during idle periods 

 Auto Pre-charge option for each burst access 

 Double data rate for data output 

 Differential clock inputs (CK and CK) 

 Bidirectional, data strobe (DQS) 

 CAS Latency: 2 and 3 

 Burst Length: 2, 4, 8 and 16 

 Burst Type: Sequential or Interleave 

 64 ms Refresh period 

 Interface: LVCMOS compatible 

 Support package: 

60 balls BGA (x16) 

90 balls BGA (x32) 

 Operating Temperature Range : 

Extended (-25°C ~ +85°C) 

Industrial (-40°C ~ +85°C)

Datasheet：

PDF datasheet	W947D6HBHX6E
Packaging	Tray
Format - Memory	RAM
Memory Type	Mobile LPDDR SDRAM
Memory Size	128M (8M x 16)
Speed	166MHz
Interface	Parallel
Voltage - Supply	1.7 V ~ 1.95 V
Operating Temperature	-25°C ~ 85°C
Package / Case	60-TFBGA
Supplier Device Package	60-VFBGA (8x9)

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