MRFE6VP5600H RF MOSFET Transistors

MRFE6VP5600H RF MOSFET Transistors 

PDF Datasheet：

Specification：

Manufacturer: Freescale Semiconductor

Product Category: RF MOSFET Transistors

RoHS:  Details

Vds - Drain-Source Breakdown Voltage: 130 V

Transistor Polarity: N-Channel

Frequency: 1.8 MHz to 600 MHz

Vgs - Gate-Source Breakdown Voltage: 10 V

Gain: 25 dB at 230 MHz

Output Power: 600 W at Peak

Maximum Operating Temperature: + 150 C

Mounting Style: SMD/SMT

Package / Case: NI-1230

Packaging: Reel

Brand: Freescale Semiconductor

Pd - Power Dissipation: 1667 W

Series: MRFE6VP5600H

Factory Pack Quantity: 50

Vgs th - Gate-Source Threshold Voltage: 2.2 V

Unit Weight: 0.464036 oz

Picture：

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