IPP60R165CP 6R165P MOSFET N-Ch 650V 21A TO-220

IPP60R165CP 6R165P MOSFET N-Ch 650V 21A TO-220

PDF Datasheet：

Specification：

Manufacturer: Infineon

Product Category: MOSFET

RoHS:  Details

Brand: Infineon Technologies

Id - Continuous Drain Current: 21 A

Vds - Drain-Source Breakdown Voltage: 650 V

Rds On - Drain-Source Resistance: 165 mOhms

Transistor Polarity: N-Channel

Vgs - Gate-Source Breakdown Voltage: 20 V

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 192 W

Mounting Style: Through Hole

Package / Case: TO-220-3

Packaging: Tube

Channel Mode: Enhancement

Configuration: Single

Fall Time: 5 ns

Minimum Operating Temperature: - 55 C

Rise Time: 5 ns

Series: CoolMOS CP

Factory Pack Quantity: 500

Tradename: CoolMOS

Typical Turn-Off Delay Time: 50 ns

Picture：

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