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IRFS52N15D IRFS52N15 MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC
| Part number | Brand | Date | QTY | Package | Remarks |
| IRFS52N15D | IR | 14+ROHS | 7500 | TO-263 |
Original have in stock |
PDF Datasheet：
Specification：
| Manufacturer: | International Rectifier | |
| Product Category: | MOSFET | |
| RoHS: |  Details |
|
| Id - Continuous Drain Current: | 60 A | |
| Vds - Drain-Source Breakdown Voltage: | 150 V | |
| Rds On - Drain-Source Resistance: | 32 mOhms | |
| Transistor Polarity: | N-Channel | |
| Vgs - Gate-Source Breakdown Voltage: | 30 V | |
| Qg - Gate Charge: | 60 nC | |
| Maximum Operating Temperature: | + 175 C | |
| Pd - Power Dissipation: | 320 W | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | D-PAK-3 | |
| Packaging: | Tube | |
| Brand: | International Rectifier | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Fall Time: | 25 ns | |
| Minimum Operating Temperature: | - 55 C | |
| Rise Time: | 47 ns | |
| Factory Pack Quantity: | 50 | |
| Typical Turn-Off Delay Time: | 28 ns |
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Shen Zhen Mingjiada electronic.Co.,ltd.
