AOS AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Part number

AO8814

Family

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Brand

AOS

Application

advanced trench technology

Feature

The AO8814 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V VGS(MAX) rating. It is ESD protected.

This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its commondrain

configuration.

VDS (V) = 20V

ID = 7.5 A (VGS = 10V)

RDS(ON) < 16mΩ (VGS = 10V)

RDS(ON) < 18mΩ (VGS = 4.5V)

RDS(ON) < 20mΩ (VGS = 3.6V)

RDS(ON) < 24mΩ (VGS = 2.5V)

RDS(ON) < 34mΩ (VGS = 1.8V)

ESD Rating: 2500V HBM

Data sheet

Payment methods

1.T/T wire transfer   2.Paypal   3.Western union  4.Cash

Transport way

1.   EMS

2.   TNT

3.   DHL

4.   FedEx

5.   China post

6.   Other special

Warranty

All parts are New And Original enjoy within 45 days return .

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