Infineon IKW75N60T Emitter Controlled HE diode

Infineon

IKW75N60T

IKW75N60T  date sheet

Product category

fast recovery anti-parallel Emitter Controlled HE diode

Application

Frequency Converters

Uninterrupted Power Supply

Description

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Positive temperature coefficient in VCE(sat)

very tight parameter distribution

high ruggedness, temperature stable behaviour

very high switching speed

Low EMI

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC1) for target applications

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