SAMSUNG K4R271669H DCS8 128mbit Rdram 256k X 16 Bit X 32s Banks

SAMSUNG

K4R271669H-DSC8

K4R271669H  date sheet

Product category

128Mbit RDRAM(H-die)256K x 16 bit x 32s Banks

Application

memory device suitable for use in a broad range of applications

Description

Highest sustained bandwidth per DRAM device

- 1.6GB/s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 32 banks: four transactions can take place simultaneously

at full bandwidth data rates

Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

Advanced power management:

- Multiple low power states allows flexibility in power

consumption versus time to transition to active state

- Power-down self-refresh

Organization: 1Kbyte pages and 32 banks

Uses Rambus Signaling Level (RSL) interface for up

to 800MHz operation

FBGA package(54 Balls)

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