IR IRFHM8363 IRFHM8363TRPBF MOSFET 30V DUAL N-CH HEXFET 14.9mOhms

Features

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Specifications

Configuration:    Dual

Package / Case: DPQFN-8

Packaging:   Reel

Technology: Si

Transistor Type: 2 N-Channel

Brand:   Infineon Technologies

Forward Transconductance - Min: 20 S

Mounting Style:  SMD/SMT

Number of Channels:     2 Channel

Transistor Polarity:   N-Channel

Fall Time:    33 ns

Id - Continuous Drain Current:     11 A

Maximum Operating Temperature:    + 150 C

Minimum Operating Temperature:     - 55 C

Pd - Power Dissipation:   2.7 W

Qg - Gate Charge:    15 nC

Rds On - Drain-Source Resistance:     16.3 mOhms

Rise Time:   94 ns

Standard Pack Qty:  4000

Typical Turn-Off Delay Time: 12 ns

Typical Turn-On Delay Time: 14 ns

Vds - Drain-Source Breakdown Voltage:    30 V

Vgs - Gate-Source Voltage:   20 V

Vgs th - Gate-Source Threshold Voltage:  1.8 V