SPP47N10L Power Transistor

Features

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FEATURES

Product Category:    MOSFET     

Manufacturer:    Infineon     

Technology: Si  

Mounting Style:  Through Hole   

Package / Case: TO-220-3   

Number of Channels:     1 Channel   

Transistor Polarity:   N-Channel  

Vds - Drain-Source Breakdown Voltage:    100 V   

Id - Continuous Drain Current:     47 A    

Rds On - Drain-Source Resistance:     26 mOhms 

Vgs - Gate-Source Voltage:   20 V    

Maximum Operating Temperature:    + 175 C

Packaging:   Tube   

Channel Mode:   Enhancement    

Brand:   Infineon Technologies   

Configuration:    Single   

Fall Time:    70 ns   

Height:  9.25 mm    

Length: 10 mm 

Minimum Operating Temperature:     - 55 C  

Pd - Power Dissipation:   175 W  

Rise Time:   100 ns 

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 50 ns   

Typical Turn-On Delay Time: 50 ns   

Width:   4.4 mm

Unit Weight: 0.211644 oz

Applications

MOSFET