FDD6612 FDD6612A 30V N-Channel PowerTrench MOSFET

Details

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FEATURES

· 30 A, 30 V RDS(ON) = 20 mW @ VGS = 10 VRDS(ON) = 28 mW @ VGS = 4.5 V

· Low gate charge

· Fast Switching

· High performance trench technology for extremely low RDS(ON)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.