FF150R12RT4 IGBT Modules IGBT 1200V 150A

Details

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FEATURES

Product Category:    IGBT Modules   

Manufacturer:    Infineon     

RoHS:   RoHS Compliant Details 

Product:      IGBT Silicon Modules     

Configuration:    Dual    

Collector- Emitter Voltage VCEO Max: 1200 V 

Collector-Emitter Saturation Voltage:  1.75 V  

Continuous Collector Current at 25 C: 150 A   

Gate-Emitter Leakage Current:    100 nA 

Pd - Power Dissipation:   790 W  

Package / Case: Module 

Maximum Operating Temperature:    + 150 C

Packaging:   Bulk     

Brand:   Infineon Technologies   

Maximum Gate Emitter Voltage:  +/- 20 V    

Minimum Operating Temperature:     - 40 C  

Mounting Style:  SMD/SMT   

Factory Pack Quantity:   10