BFQ790 BFQ790H6327XTSA1 RF Bipolar Transistors

Details

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FEATURES

• High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and

2650 MHz Class A application circuits

• High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40%

collector "Ȅi i"n 6

• High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit

• Exceptional ruggedness up to VSWR 10:1 at output

• High maximum RF input power PRFinmax of 18 dBm

• 100% test of proper die attach for reproducible thermal contact

• 100% DC and RF tested

The BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in high linearity applications.