IR《IRF7101PBF》MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC

Manufacturer

Infineon / IR

Manufacturer Part

IRF7101PBF

Description

MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC

Application

Adavanced Process Technology

Ultra Low On-Resistance

Dual N-Channel MOSFET

Surface Mount

Datasheet

IRF7101

Details

Image

Product Category:MOSFET

RoHS: Details

Technology:Si

Mounting Style:SMD/SMT

Package / Case:SO-8

Number of Channels:2 Channel

Transistor Polarity:N-Channel

Vds - Drain-Source Breakdown Voltage:20 V

Id - Continuous Drain Current:3.5 A

Rds On - Drain-Source Resistance:150 mOhms

Vgs - Gate-Source Voltage:12 V

Vgs th - Gate-Source Threshold Voltage:3 V

Qg - Gate Charge:10 nC

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 150 C

Pd - Power Dissipation:2 W

Configuration:Dual

Channel Mode:Enhancement

Packaging:Tube

Height:1.75 mm

Length:4.9 mm

Transistor Type:2 N-Channel

Type:HEXFET Power MOSFET

Width:3.9 mm

Brand:Infineon / IR

Forward Transconductance - Min:1.1 S

Fall Time:30 ns

Product Type:MOSFET

Rise Time:10 ns

Factory Pack Quantity:95

Subcategory:MOSFETs

Typical Turn-Off Delay Time:24 ns

Typical Turn-On Delay Time:7 ns

Unit Weight:0.019048 oz

PN：IRF7101PBF

Method of payment

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