Supply MOSFET IPT012N08N5ATMA1 IPT012N08N5 N-channel 80V 300A transistor, Mingjiada only makes original, factory stock, new stock, price advantage, welcome to contact sales@hkmjd.com!
Manufacturer: Infineon Technologies
Product model: IPT012N08N5 IPT012N08N5ATMA1
Description: MOSFET N-CH 80V 300A 8HSOF
Description: Surface Mount N Channel 80 V 300A (Tc) 375W (Tc) PG-HSOF-8-1
Specifications
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 300A (Tc)
Driving Voltage (Max Rds On, Min Rds On) 6V, 10V
On-resistance (max) at various Id, Vgs 1.2 milliohms @ 150A, 10V
Vgs(th) (max) at different Id 3.8V @ 280µA
Gate charge (Qg) (max) at various Vgs 223 nC @ 10 V
Vgs (max) ±20V
Input Capacitance (Ciss) at Vds (Maximum) 17000 pF @ 40 V
FET function -
Power Dissipation (Max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
