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The LX5530 is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9 – 5.9
GHz frequency range. The PA is
implemented as a three-stage monolithic
microwave integrated circuit (MMIC)
with active bias, on-chip input
matching and output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). It operates with a single
positive voltage supply of 3 – 5V,
with high power gain of up to 33dB.
When operated at 5V supply voltage,
it provides up to +25dBm linear
output power for 802.11a OFDM
spectrum mask compliance, and low
EVM of 3% for up to +23dBm output
power in the 4.9-5.9GHz band.
The LX5530 also features an on-chip
power detector at the output port of the
PA to help reduce BOM cost and PCB
space for implementation of power
control in a typical wireless system. The
power detector is integrated with a
temperature-compensated bias network
and provides very stable response
across a wide range of output power
levels, over temperature extremes from
-40 to +85°C.
The LX5530 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability makes the
LX5530 an ideal solution for
broadband, high-gain power amplifier
requirements for IEEE 802.11a, and
Hiperlan2 portable WLAN, as well as
the emerging
PDF datasheet :
Shenzhen Mingjiada Electronics Co., Ltd
Tell: 86755-83957301
Email:sales@hkmjd.com
