Infineon IKW25N120H3 High Speed 1200V 25A IGBT Transistors With Anti-Parallel Diode

 

Shenzhen Mingjiada Electronics Co., Ltd., a well-known independent distributor of electronic components in the industry, offers the Infineon IKW25N120H3 high-speed 1200V 25A IGBT transistor in stock. It employs advanced TRENCHSTOP™ technology and integrates a reverse-parallel diode.

 

This IKW25N120H3 device achieves an excellent balance between switching losses and conduction losses, making it particularly suitable for high-frequency hard-switching applications. It is an ideal choice for applications such as industrial motor drives, uninterruptible power supplies (UPS), welding equipment, and solar inverters.

 

【IKW25N120H3 Product Overview】

The IKW25N120H3 is a representative product of Infineon's fourth-generation high-speed TRENCHSTOP™ IGBT technology. It is packaged in a TO-247-3 package, integrating a 1200V, 25A IGBT and a high-speed anti-parallel diode.

 

This design reduces the need for external components, enhancing system integration and reliability.

 

The most notable technical feature of the IKW25N120H3 device is its optimised switching characteristics. It employs field-stop trench technology, which not only achieves a low saturation voltage drop (Vce(sat)) but also significantly reduces switching losses, enabling efficient operation at frequencies up to 70kHz.

 

【IKW25N120H3 Key Performance Parameters Analysis】

The IKW25N120H3 boasts several impressive electrical characteristics, which directly determine its performance in applications:

Voltage and current specifications: Collector-emitter voltage (Vces) up to 1200V, continuous collector current (Ic) up to 50A at 25°C and 25A at 100°C, with pulse current capability up to 100A.

Conduction Characteristics: The collector-emitter saturation voltage (Vce(sat)) has a typical value of 2.05V (tested at 15V gate voltage and 25A collector current). This low conduction voltage drop helps reduce power loss in the conduction state.

Switching characteristics: The turn-on delay time (td(on)) is only 26 ns, and the turn-off delay time (td(off)) is 277 ns. Such fast switching speeds make it suitable for high-frequency applications, but voltage overshoot and electromagnetic interference must be considered in the driver circuit design.

Switching losses: The turn-on energy (Eon) is 1.8 mJ, and the turn-off energy (Eoff) is 0.85 mJ (under hard switching conditions). Lower switching losses directly translate to higher system efficiency and reduced thermal management requirements.

Integrated diode characteristics: The reverse recovery time (trr) of the built-in anti-parallel diode is 290 ns, and the forward voltage (VF) is 2.4 V. This ensures the ability to handle inductive loads.

Thermal performance: The device's maximum power dissipation (Ptot) is 326W, with an operating junction temperature range of -40°C to +175°C. The wide temperature range enables it to withstand harsh operating environments.

 

 

【IKW25N120H3 Structure and Packaging Features】

The IKW25N120H3 adopts the standard TO-247-3 through-hole package (also known as PG-TO247-3), which offers excellent mechanical strength and thermal performance.

 

The IKW25N120H3 package dimensions are: length 16.13mm, width 5.21mm, height 21.1mm². This widely used packaging format facilitates installation and heat dissipation, and is compatible with most standard heat sinks.  

 

The IKW25N120H3 device weighs approximately 5.42 grams. The packaging materials comply with RoHS and lead-free standards, meeting environmental requirements. The packaging interior features a copper substrate and an optimised internal bonding wire design, ensuring excellent current handling capability and thermal conductivity efficiency.

 

【IKW25N120H3 Technical Features and Advantages】

The IKW25N120H3 IGBT transistor combines multiple technical advantages:

High voltage capability: 1200V collector breakdown voltage, suitable for high-voltage application environments

High current handling: maximum continuous collector current up to 50A, pulse current up to 100A

Low loss performance: Combines low switching loss and low conduction loss to enhance system efficiency  

Excellent thermal performance: Operating junction temperature range from -40°C to 175°C, with a maximum power rating of 326W  

Fast switching characteristics: Suitable for high-frequency switching topologies above 20kHz

 

These features make the IKW25N120H3 an ideal choice for a wide range of power electronic applications.

 

【IKW25N120H3 Application Areas】

The IKW25N120H3 is suitable for a wide range of power electronics applications, particularly those requiring high switching frequencies and high efficiency:

 

Industrial motor drives: Used as power switching components in variable frequency drives and servo drives, its high switching frequency supports high-precision motor control.

Uninterruptible power supply (UPS): Especially suitable for the inverter and rectifier sections of online UPS systems, improving energy conversion efficiency.

Welding equipment: Used in the power conversion section of inverter welding machines, where high frequencies allow for smaller transformers.  

Solar inverters: Suitable for the DC-AC conversion stage of string-type photovoltaic inverters, with high voltage capability to meet the voltage requirements of photovoltaic strings.  

Switch-mode power supplies (SMPS): Particularly suitable for high-frequency power conversion stages in high-power communication power supplies and server power supplies.