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IR IRF644NS 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET

IR  IRF644NS  14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 

 

Part number  Brand Date QTY Package Remarks

IRF644NS

IR 14+ROHS 7500  TO-263

Original have in  stock 

PDF datasheet:

SPECIFICATIONS:

Mfr Package Description PLASTIC, D2PAK-3
Status DISCONTINUED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Surface Mount Yes
Terminal Form GULL WING
Terminal Finish TIN LEAD
Terminal Position SINGLE
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection DRAIN
Number of Elements 1
Transistor Application SWITCHING
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE POWER
Drain Current-Max (ID) 14 A
DS Breakdown Voltage-Min 250 V
Avalanche Energy Rating (Eas) 180 mJ
Drain-source On Resistance-Max 0.2400 ohm
Pulsed Drain Current-Max (IDM) 56 A

PICTURE:

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Shen Zhen Mingjiada electronic.Co.,ltd.

 

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