The official website - Shenzhen Mingjiada Electronic Co., LTD
IDT71V67603S133BG IDT71V67603S133 IC SRAM 9MBIT 133MHZ 119BGA
| Part number | Brand | Date | QTY | Package | Remarks |
| IDT71V67603S133BG | IDT | 14+ROHS | 7500 | BGA |
Original have in stock |
Features
◆ 256K x 36, 512K x 18 memory configurations
◆ Supports high system speed:
– 166MHz 3.5ns clock access time
– 150MHz 3.8ns clock access time
– 133MHz 4.2ns clock access time
◆ LBO input selects interleaved or linear burst mode
◆ Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
◆ 3.3V core power supply
◆ Power down controlled by ZZ input
◆ 3.3V I/O supply (VDDQ)
◆ Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA).
Specification
| Datasheets | IDT71V67603S133BG |
|---|---|
| Packaging | Tray |
| Format - Memory | RAM |
| Memory Type | SRAM - Synchronous |
| Memory Size | 9M (256K x 36) |
| Speed | 133MHz |
| Interface | Parallel |
| Voltage - Supply | 3.135 V ~ 3.465 V |
| Operating Temperature | 0°C ~ 70°C |
| Package / Case | 119-BGA |
Functional Block Diagram
Photo
From :www.hkmjd.com
Shen Zhen Mingjiada electronic.Co.,ltd.
