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NTE4151PT1G MOSFET P-CH 20V 760MA SC-89

NTE4151PT1G MOSFET P-CH 20V 760MA SC-89

 

Part number  Brand Date QTY Package Remarks
NTE4151PT1G ON 14+ROHS 7500 SOT-323

Original have in  stock

PDF Datasheet:

Features

• Low RDS(on) for Higher Efficiency and Longer Battery Life

• Small Outline Package (1.6 x 1.6 mm)

• SC−75 Standard Gullwing Package

• ESD Protected Gate

• Pb−Free Packages are Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Small Drive Circuits

• Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 760mA (Tj)
Rds On (Max) @ Id, Vgs 360 mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA
Gate Charge (Qg) @ Vgs 2.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 156pF @ 5V
Power - Max 313mW
Mounting Type Surface Mount
Package / Case SC-89, SOT-490

 

From :www.hkmjd.com

Shen Zhen Mingjiada electronic.Co.,ltd.

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