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MRF7S21170HR3 RF Power Field Effect Transistors New in stock

MRF7S21170HR3 RF Power Field Effect Transistors New in stock

 

Part number  Brand Date QTY Package Remarks
MRF7S21170HR3 FREESCALE 14+ROHS 7500 NI-880

Original have in  stock

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class COperation

• Designed for Digital Predistortion Error Correction Systems

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Datasheet MRF7S21170HR3
Transistor Type LDMOS
Frequency 2.11GHz
Gain 16dB
Voltage - Test 28V
Current Rating 10µA
Noise Figure -
Current - Test 1.4A
Power - Output 50W
Voltage - Rated 65V
Package / Case NI-880

PACKAGE DIMENSIONS

From :www.hkmjd.com

Shen Zhen Mingjiada electronic.Co.,ltd.

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