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AP30G120W 30G120W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP30G120W 30G120W  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

 

Part number  Brand Date QTY Package Remarks
AP30G120W APEC 14+ROHS 7500 TO-3P

Original have in  stock

PDF Datasheet:

Specification:

Mfr Package Description ROHS COMPLIANT, TO-3P, 3 PIN
Status ACTIVE
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Number of Elements 1
Transistor Application GENERAL PURPOSE
Transistor Element Material SILICON
Channel Type N-CHANNEL
Transistor Type INSULATED GATE BIPOLAR
Turn-on Time-Nom (ton) 40 ns
Turn-off Time-Nom (toff) 265 ns
Collector Current-Max (IC) 60 A
Collector-emitter Voltage-Max 1200 V

Picture:

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Shen Zhen Mingjiada electronic.Co.,ltd.

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