INFINEON BFP450 Linear Low Noise Silicon Bipolar RF Transistor

INFINEON BFP450 Linear Low Noise Silicon Bipolar RF Transistor

PDF Datasheet：

Features

• Highly linear low noise driver amplifier for all RF frontends up to 3 GHz

• Based on Infineon´s reliable high volume 25 GHz silicon bipolar technology

• Output compression point OP1dB = 19 dBm  at 90 mA, 3 V, 1.9 GHz, 50 Ω system

• Output 3rd order intermodulation point OIP3 = 31 dBm  at 90 mA, 3 V, 1.9 GHz, 50 Ω system

• Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz

• Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz

• Pb-free (RoHS compliant) and halogen-free package with visible leads

• Qualification report according to AEC-Q101 available

Applications Examples

Driver amplifier

• ISM bands 434 and 868 MHz

• 1.9 GHz cordless phones

• CATV LNA

Transmitter driver amplifier

• 2.4 GHz WLAN and Bluetooth Output stage LNA for active antennas

• TV, GPS, SDARS, 2.4 GHz WLAN, etc Suitable for 3 - 5.5 GHz oscillators

Picture：

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