IRGP4063D GP4063D INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063D GP4063D INSULATED GATE BIPOLAR TRANSISTOR

PDF Datasheet：

Features

• Low VCE (ON) Trench IGBT Technology

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 μS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (ILM)

• Positive VCE (ON) Temperature co-efficient

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Picture：

MJD is a corporation which engaged in agency electronic components. MJD Through seventeen years unrimitting efforts,  aspire to provide our customers with world-leading products and service. Now already became a one of the most famous electronic components distributor in China.

From :www.hkmjd.com

Shen Zhen Mingjiada electronic.Co.,ltd.