Product Info

RA08H1317

Part No.: RA08H1317
MFG: MIT

D/C: 13+
Packing: RF Power Transistor
Original price: 120
QTY: 32587
PDF:

Order hotline: 86755-83294757
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Description: Origina in stock 原装现货

Detailed description

RA08H1317

135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO

DESCRIPTION

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module

for 12.5-volt portable/ mobile radios that operate in the 135- to

175-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (VGG=0V), only a small leakage current flows into the drain

and the RF input signal attenuates up to 60 dB. The output power

and drain current increase as the gate voltage increases. With a

gate voltage around 2.5V (minimum), output power and drain

current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

VGG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD@0 @ VDD=12.5V, VGG=0V)

• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW

• hT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the

input power

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