Product Info

MT46H16M16LFBF-6

Part No.: MT46H16M16LFBF-6
MFG: Micron

D/C: 13+RoHS
Packing: BGA
Original price: 15
QTY: 21200
PDF:

Order hotline: 86755-83294757
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Description: 100%进口原装 New in stock

Detailed description

MT46H16M16LFBF-6ITH

Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks

Features

VDD/VDDQ = 1.70–1.95V

Bidirectional data strobe per byte of data (DQS)

Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

Differential clock inputs (CK and CK#)

Commands entered on each positive CK edge

DQS edge-aligned with data for READs; centeraligned with data for WRITEs

Four internal banks for concurrent operation

Data masks (DM) for masking write data—one mask

per byte

Programmable burst lengths: 2, 4, or 8

Concurrent auto precharge option supported

Auto refresh and self refresh modes

1.8V LVCMOS compatible inputs

On-chip temperature sensor to control self refresh

rate

Partial-array self refresh (PASR)

Deep power-down (DPD)

Selectable output drive (DS)

Clock stop capability

64ms refresh period

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