PTFA092213EL High Power RF LDMOS FETs

PTFA092213EL High Power RF LDMOS FETs 

PDF Datasheet：

Features

• Broadband internal matching

• Typical two-carrier WCDMA performance at 960 MHz, 30 V

- Average output power = 50 W 

- Linear Gain = 17.5 dB

- Efficiency = 29%

- Intermodulation distortion = –32 dBc 

- Adjacent channel power = –42.5 dBc

• Typical CW performance, 960 MHz, 30 V 

- Output power at P1dB = 250 W

- Linear Gain = 17.5 dB

- Efficiency = 52% 

• Integrated ESD protection: Human Body Model, Class 2 (minimum) 

• Excellent thermal stability, low HCI drift

• Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power

• Pb-free, RoHS-compliant

Picture：

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