Product Info

MRF9080

Part No.: MRF9080
MFG: Freescale

D/C: 13+RoHS
Packing: RF Mosfet 高频/射频管
Original price: 333
QTY: 66544
PDF:

Order hotline: 86755-83294757
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Description: 全新原装现货New and original in stock

Detailed description

MRF9080 - RF POWER FIELD EFFECT TRANSISTORS

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of these devices make them ideal for large–signal, common–

source amplifier applications in 26 volt base station equipment.

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

Efficiency @ P1db: 55%

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

**注意 & Noted:

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