Product Info

BSM200GB120DN2

Part No.: BSM200GB120DN2
MFG: Infineon

D/C: 13+ROHS
Packing: IGBT
Original price: 500
QTY: 38538
PDF:

Order hotline: 86755-83294757
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Description: 原装现货100% new and original in stock

Detailed description

BSM200GB120DN2 - IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) - Siemens Semiconductor Group

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: RoHS Compliant Details

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Half Bridge Module

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 290 A

Gate-Emitter Leakage Current: 400 nA

Power Dissipation: 1.4 kW

Maximum Operating Temperature: + 150 C

Package / Case: Half Bridge2

Maximum Gate Emitter Voltage: 20 V

Mounting Style: Screw

**注意 & Noted:

Because of wholesale price is different from sample price, our website cannot state. Please contact us online. As well as welcome you call us : 0755-83957301.We will offer a right price; Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support !

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BSM150GB120DN2	Infineon	13+RoHS	IGBT MODULE	500	全新原装正品现货(New and original in stock)
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BSM200GB120DN2	Infineon	13+ROHS	IGBT	38538	原装现货100% new and original in stock