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MAT01AH

MAT01AH
Part No.: MAT01AH
MFG: AD AD
D/C: 13+
Packing: CAN6
Original price: 130
QTY: 98000
PDF:
Order hotline: 86755-83294757
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Description: Original 专业代理AD 价格优势
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Detailed description

MAT01AH

Matched Monolithic Dual Transistor
 
 
FEATURES
Low VOS (VBE Match): 40 mV typ, 100 mV max
Low TCVOS: 0.5 mV/8C max
High hFE: 500 min
Excellent hFE Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23 mV p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
 
 
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very
high hFE is provided over a six decade range of collector current,
including an exceptional hFE of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
 
 
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Part No. MFG D/C Packing QTY Description PDF
 MAT01AH  AD  13+  CAN6  98000  Original 专业代理AD 价格优势
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